Extraction of equivalent oxide thickness for HfO2 high k gate dielectrics

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	Extraction of equivalent oxide thickness for HfO2 high k gate dielectrics
	Chen, Yong ; Zhao, Jianming ; Han, Dedong ; Kang, Jinfeng ; Han, Ruqi
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2006
英文摘要	The equivalent oxide thickness (EOT) of an HfO2 high k dielectric is extracted in two steps. First, a dual-frequency technique is employed for the C-V curve to overcome the effects of leakage current and substrate resistance. Second, an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric, without the effects of inversion or accumulation capacitance. The relative error between the EOT extracted by this two-step approach and by the quantum corrected Poisson equation is less than 5%, thus validating the approach.; EI; 0; 5; 852-856; 27
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/410137]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Yong,Zhao, Jianming,Han, Dedong,et al. Extraction of equivalent oxide thickness for HfO2 high k gate dielectrics[J]. pan tao ti hsueh paochinese journal of semiconductors,2006.
APA	Chen, Yong,Zhao, Jianming,Han, Dedong,Kang, Jinfeng,&Han, Ruqi.(2006).Extraction of equivalent oxide thickness for HfO2 high k gate dielectrics.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Chen, Yong,et al."Extraction of equivalent oxide thickness for HfO2 high k gate dielectrics".pan tao ti hsueh paochinese journal of semiconductors (2006).