Raman online measurement of stress resulting from micromachining

CORC > 北京大学 > 信息科学技术学院

	Raman online measurement of stress resulting from micromachining
	Sang, Shengbo ; Xue, Chenyang ; Zhang, Wendong ; Xiong, Jijun ; Ruan, Yong ; Zhang, Dacheng ; Hao, Yilong
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2006
英文摘要	Micromachining can result in residual stress in a wafer. This paper puts forward an online measuring method for measuring the stress in silicon samples prepared with three common micromachining processes: deposition, etching, and bonding. The experimental results support the theory. In deposition processes, the residual stress resulting from Si3N4, which is tensile stress, is larger than SiO2, which is compressive stress. The tensile stress resulting from etching and bonding processes is relatively larger with a maximum value over 300 MPa.; EI; 0; 6; 1141-1146; 27
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/410127]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Sang, Shengbo,Xue, Chenyang,Zhang, Wendong,et al. Raman online measurement of stress resulting from micromachining[J]. pan tao ti hsueh paochinese journal of semiconductors,2006.
APA	Sang, Shengbo.,Xue, Chenyang.,Zhang, Wendong.,Xiong, Jijun.,Ruan, Yong.,...&Hao, Yilong.(2006).Raman online measurement of stress resulting from micromachining.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Sang, Shengbo,et al."Raman online measurement of stress resulting from micromachining".pan tao ti hsueh paochinese journal of semiconductors (2006).