High linearity float-zone silicon phototransistors with high sensitivity and stability

CORC > 北京大学 > 信息科学技术学院

	High linearity float-zone silicon phototransistors with high sensitivity and stability
	Han, Dejun ; Sun, Caiming ; Sheng, Liyan ; Zhang, Xiurong ; Zhang, Haijun ; Yan, Fengzhang ; Yang, Ru ; Zhang, Lu ; Ning, Baojun
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2006
英文摘要	A float zone silicon phototransistor is fabricated with sensitivity of 38 A/W for light of wavelength 0.83 ??m and optical power of 0.15 nW. This demonstrates that the linearity reaches the highest when the base of the phototransistor is completely depleted, and the fitting goodness of output is 0.9954 over a 40 dB range from 0.15 to 1500 nW. The stability of 1% in the sensitivity for the punch through phototransistor with an internal current conversion gain of 130 can be obtained if the bias voltage and operating temperature can be stable to about 2.5%(1 V in 40 V) and the temperature to ??2??C. The stability is better than that of reported APD which had a similar gain.; EI; 0; SUPPL.; 223-226; 27
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/410054]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Han, Dejun,Sun, Caiming,Sheng, Liyan,et al. High linearity float-zone silicon phototransistors with high sensitivity and stability[J]. pan tao ti hsueh paochinese journal of semiconductors,2006.
APA	Han, Dejun.,Sun, Caiming.,Sheng, Liyan.,Zhang, Xiurong.,Zhang, Haijun.,...&Ning, Baojun.(2006).High linearity float-zone silicon phototransistors with high sensitivity and stability.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Han, Dejun,et al."High linearity float-zone silicon phototransistors with high sensitivity and stability".pan tao ti hsueh paochinese journal of semiconductors (2006).