Development of high voltage thin film SOI device with linearly doped drift region | |
Zhang, S.D. ; Han, R.Q. ; Tommy, L. ; Johnny, S. | |
刊名 | tien tzu hsueh paoacta electronica sinica
![]() |
2001 | |
英文摘要 | Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given. LDMOS transistors are fabricated on the SOI wafers with Si film of 0.15??m and buried oxide of 2??m. The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated. Based on the optimization of the impurity dose in drift region, the breakdown voltage over 612 V is observed in the SOI LDMOS transistors with 50??m drift region.; EI; 0; 2; 164-167; 29 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/408355] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zhang, S.D.,Han, R.Q.,Tommy, L.,et al. Development of high voltage thin film SOI device with linearly doped drift region[J]. tien tzu hsueh paoacta electronica sinica,2001. |
APA | Zhang, S.D.,Han, R.Q.,Tommy, L.,&Johnny, S..(2001).Development of high voltage thin film SOI device with linearly doped drift region.tien tzu hsueh paoacta electronica sinica. |
MLA | Zhang, S.D.,et al."Development of high voltage thin film SOI device with linearly doped drift region".tien tzu hsueh paoacta electronica sinica (2001). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论