Development of high voltage thin film SOI device with linearly doped drift region

CORC > 北京大学 > 信息科学技术学院

	Development of high voltage thin film SOI device with linearly doped drift region
	Zhang, S.D. ; Han, R.Q. ; Tommy, L. ; Johnny, S.
刊名	tien tzu hsueh paoacta electronica sinica
	2001
英文摘要	Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given. LDMOS transistors are fabricated on the SOI wafers with Si film of 0.15??m and buried oxide of 2??m. The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated. Based on the optimization of the impurity dose in drift region, the breakdown voltage over 612 V is observed in the SOI LDMOS transistors with 50??m drift region.; EI; 0; 2; 164-167; 29
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408355]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, S.D.,Han, R.Q.,Tommy, L.,et al. Development of high voltage thin film SOI device with linearly doped drift region[J]. tien tzu hsueh paoacta electronica sinica,2001.
APA	Zhang, S.D.,Han, R.Q.,Tommy, L.,&Johnny, S..(2001).Development of high voltage thin film SOI device with linearly doped drift region.tien tzu hsueh paoacta electronica sinica.
MLA	Zhang, S.D.,et al."Development of high voltage thin film SOI device with linearly doped drift region".tien tzu hsueh paoacta electronica sinica (2001).