Phenomenological MOSFET model including total dose radiation effects at a high total dose

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	Phenomenological MOSFET model including total dose radiation effects at a high total dose
	Wan, Xin-Heng ; Zhang, Xing ; Gao, Wen-Yu ; Huang, Ru ; Wang, Yang-Yuan
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2001
英文摘要	A phenomenological model was proposed to discuss the total dose radiation effects on MOS devices at a high total dose. The model was verified by the comparison results of the simulated and measured post-radiation device characteristics of MOSFET. As a basic circuit simulation tool, it can be used to analyze the MOS transistors exposed to a nuclear environment with high radiation. The decrease in the electron mobility due to high dose radiation is caused mainly by the increase in Coulomb scattering of the interface charges with an increased density.; EI; 0; 10; 1325-1328; 22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408339]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wan, Xin-Heng,Zhang, Xing,Gao, Wen-Yu,et al. Phenomenological MOSFET model including total dose radiation effects at a high total dose[J]. pan tao ti hsueh paochinese journal of semiconductors,2001.
APA	Wan, Xin-Heng,Zhang, Xing,Gao, Wen-Yu,Huang, Ru,&Wang, Yang-Yuan.(2001).Phenomenological MOSFET model including total dose radiation effects at a high total dose.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Wan, Xin-Heng,et al."Phenomenological MOSFET model including total dose radiation effects at a high total dose".pan tao ti hsueh paochinese journal of semiconductors (2001).