Short-channel SOI MOSFET model considering total dose effects

CORC > 北京大学 > 信息科学技术学院

	Short-channel SOI MOSFET model considering total dose effects
	Wan, Xin-Heng ; Gan, Xue-Wen ; Zhang, Xing ; Huang, Ru ; Wang, Yang-Yuan
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2001
英文摘要	A new approach was proposed to model the total dose effects on silicon-on-insulator (SOI) devices for circuit simulation. The fully continuous compact SOI MOSFET model can automatically account for the correct body depletion condition, without assuming a priori charge partitioning or constant surface potential. It can also account for the transition between FD and PD behavior that occurs in the practical devices. The model was validated by the comparative result between the simulated and measured post-radiation device characteristics of thin-film SOI MOSFET fabricated on SIMOX wafer.; EI; 0; 9; 1154-1159; 22
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408290]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wan, Xin-Heng,Gan, Xue-Wen,Zhang, Xing,et al. Short-channel SOI MOSFET model considering total dose effects[J]. pan tao ti hsueh paochinese journal of semiconductors,2001.
APA	Wan, Xin-Heng,Gan, Xue-Wen,Zhang, Xing,Huang, Ru,&Wang, Yang-Yuan.(2001).Short-channel SOI MOSFET model considering total dose effects.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Wan, Xin-Heng,et al."Short-channel SOI MOSFET model considering total dose effects".pan tao ti hsueh paochinese journal of semiconductors (2001).