Closed-form high frequency noise model for short channel SOI MOSFETS

CORC > 北京大学 > 信息科学技术学院

	Closed-form high frequency noise model for short channel SOI MOSFETS
	Zhang, Guo-Yan ; Liao, Huai-Lin ; Huang, Ru ; Mansun, Chan ; Zhang, Xing ; Wang, Yang-Yuan
刊名	tien tzu hsueh paoacta electronica sinica
	2002
英文摘要	A closed-form model able to predict high frequency thermal noise of SOI MOSFETS for all channel length down to deep sub-micron in saturation region is presented. By incorporating the energy balance equation, this model can exactly describe the noise behavior of SOI MOSFET. At the same time, the phenomena that a deep sub-micron MOSFET exhibits a minimum noise value at a certain drain current (Iopt) when working in saturation can be explained very well. This model is verified by experimental data and can be easily implemented into existing circuit simulators such as SPICE.; EI; 0; 11; 1601-1604; 30
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/408223]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Guo-Yan,Liao, Huai-Lin,Huang, Ru,et al. Closed-form high frequency noise model for short channel SOI MOSFETS[J]. tien tzu hsueh paoacta electronica sinica,2002.
APA	Zhang, Guo-Yan,Liao, Huai-Lin,Huang, Ru,Mansun, Chan,Zhang, Xing,&Wang, Yang-Yuan.(2002).Closed-form high frequency noise model for short channel SOI MOSFETS.tien tzu hsueh paoacta electronica sinica.
MLA	Zhang, Guo-Yan,et al."Closed-form high frequency noise model for short channel SOI MOSFETS".tien tzu hsueh paoacta electronica sinica (2002).