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	A new test structure to measure bonding strength in micro-bonding area
	Puan, Y ; Zhang, DC ; He, XF ; Wang, YY
	2004
关键词	MEMS anodic bonding bonding strength shear stress DRIE ICP torsional strength SILICON
英文摘要	In the design and fabrication of MEMS devices, MEMS fabrication process based on Silicon is a main technology, to which is deeply paid attention by researchers and industries. Bonding technology including Silicon to Glass and. Silicon to Silicon is fundamental for bulk Silicon MEMS devices. Because of the characters of MEMS devices, its bonding area is from micro area to milli-area, thus traditional methods to test bonding strength are not sufficient any more. Measuring the strength of that scale has become the choke point for MEMS development. We firsts defined a new way, which has been applied to patent with the application patent number: 2004100390259. A series of single crystal cantilever beam was taken to test max shear stress of bonding strength in micro area., whose square bonding profile length from 6 mum to 120 mum. The calculated lateral shear forces that cause a lateral displacement of I micro at the free end are comparable from theory and solid element. The relative error is about 4.9% and this error is acceptable in engineering. From experimental results we can obtain a curve of torsional strength versus the bonding area, which can be used to determine the bonding area according to the required torque for their MEMS devices.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000225098000052&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Automation & Control Systems; Engineering, Biomedical; Engineering, Electrical & Electronic; Instruments & Instrumentation; Optics; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406936]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Puan, Y,Zhang, DC,He, XF,et al. A new test structure to measure bonding strength in micro-bonding area. 2004-01-01.

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