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	Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation
	Wang, Hao ; Ma, Chenyue ; Zhang, Chenfei ; He, Frank ; Zhang, Xing ; Lin, Xinnan
	2010
英文摘要	This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device Drift-Diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/INEC.2010.5424986
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406236]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Hao,Ma, Chenyue,Zhang, Chenfei,et al. Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation. 2010-01-01.

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