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	Simulation Study on A New Dual-Material Nanowire MOS Surrounding-Gate Transistor
	Zhou, Wang ; Zhang, Lining ; Xu, Yiwen ; Chen, Lin ; He, Frank
	2010
英文摘要	In this paper, a novel field effect nanowire MOS transistor taking advantage of both dual-material gate and surrounding gate is proposed and performance characteristics are demonstrated numerically in detail. Surrounding-gate transistor is known to be used to enhance the electrostatic control of the channel, and dual-material-gate structure is extended from split-gate field effect transistor to obtain larger current and better short-channel performance. Three dimensional device simulations with Sentaurus Device are performed on this dual-material surrounding-gate transistor. Higher driving current, high I(ON)/I(OFF) ratio and suppressed short-channel effects are obtained with this novel device structure.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000282026500097&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/INEC.2010.5424621
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406231]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhou, Wang,Zhang, Lining,Xu, Yiwen,et al. Simulation Study on A New Dual-Material Nanowire MOS Surrounding-Gate Transistor. 2010-01-01.

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