Effect of Additives on Copper Electroplating Profile for TSV Filling | |
Zhu, Yunhui ; Bian, Yuan ; Sun, Xin ; Ma, Shenglin ; Cui, Qinghu ; Zhong, Xiao ; Chen, Jing ; Miao, Min ; Jin, Yufeng | |
2012 | |
英文摘要 | 3D integration with TSVs is emerging as a promising technology for the next generation integrated circuits. TSV filling is a critical process in TSV fabrication and has direct effect on electrical performance of TSVs. In this paper, we mainly focus on effect of additives used in methanesulfonic based solution on copper electroplating filling. Numerical simulation based on an absorption-diffusion model has been carried out with electrochemical data. TSV filling experiment results with different additive concentrations are presented and void-free TSV filling has been achieved.; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/405940] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zhu, Yunhui,Bian, Yuan,Sun, Xin,et al. Effect of Additives on Copper Electroplating Profile for TSV Filling. 2012-01-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论