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Designing Scratchpad Memory Architecture with Emerging STT-RAM Memory Technologies
Wang, Peng ; Sun, Guangyu ; Wang, Tao ; Xie, Yuan ; Cong, Jason
2013
英文摘要Scratchpad memories (SPMs) have been widely used in embedded systems to achieve comparable performance with better energy efficiency when compared to caches. Spin-transfer torque RAM (STT-RAM) is an emerging nonvolatile memory technology that has low-power and high-density advantages over SRAM. In this study we explore and evaluate a series of scratchpad memory architectures consisting of STT-RAM. The experimental results reveal that with optimized design, STTRAM is an effective alternative to SRAM for scratchpad memory in low-power embedded systems.; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 3
语种英语
DOI标识10.1109/ISCAS.2013.6572078
内容类型其他
源URL[http://ir.pku.edu.cn/handle/20.500.11897/405750]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Wang, Peng,Sun, Guangyu,Wang, Tao,et al. Designing Scratchpad Memory Architecture with Emerging STT-RAM Memory Technologies. 2013-01-01.
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