Scaling capability improvement of silicon-on-void (SOV) MOSFET

doi:10.1088/0268-1242/20/2/002

CORC > 北京大学 > 信息科学技术学院

	Scaling capability improvement of silicon-on-void (SOV) MOSFET
	Tian, Y ; Bu, WH ; Wu, D ; An, X ; Huang, R ; Wang, YY
刊名	semiconductor science and technology
	2005
关键词	SHORT-CHANNEL
DOI	10.1088/0268-1242/20/2/002
英文摘要	In this paper, the scaling capability improvement of silicon-on-void (SOV) MOSFET is comprehensively investigated. The results show that SOV MOSFET shows a significant improvement in the suppression of the short-channel effects (SCE) caused by the potential coupling between the source and drain through the buried layer. In addition, the parasitic capacitance between the source/drain and the substrate can be greatly decreased. The minimal channel length of SOV MOSFET is reduced by 27% compared with ultra-thin-body (UTB) SOI MOSFET. Most of all, the limitation of silicon film thickness of SOV MOSFET can be relaxed to about 50%, in comparison with SOI MOSFET. SOV MOSFET can alleviate the critical problem and further improve the immunity of SCE of UTB SOI MOSFET in the nanoscale regime. SOV MOSFET will be a good choice of device structure to put off the eventual limit in scaling down.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; SCI(E); EI; 7; ARTICLE; 2; 115-119; 20
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/399934]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tian, Y,Bu, WH,Wu, D,et al. Scaling capability improvement of silicon-on-void (SOV) MOSFET[J]. semiconductor science and technology,2005.
APA	Tian, Y,Bu, WH,Wu, D,An, X,Huang, R,&Wang, YY.(2005).Scaling capability improvement of silicon-on-void (SOV) MOSFET.semiconductor science and technology.
MLA	Tian, Y,et al."Scaling capability improvement of silicon-on-void (SOV) MOSFET".semiconductor science and technology (2005).