Resistivity measurements of self-assembled epitaxially grown erbium   silicide nanowires

doi:10.1088/0022-3727/39/13/031

CORC > 北京大学 > 信息科学技术学院

	Resistivity measurements of self-assembled epitaxially grown erbium silicide nanowires
	Li, ZG ; Long, SB ; Wang, CS ; Ming, L ; Wu, WG ; Hao, YL ; Zhao, XW
刊名	journal of physics d applied physics
	2006
关键词	ELECTRICAL-RESISTIVITY SI(001) TRANSPORT HETEROSTRUCTURES MICROSCOPY FILMS WIRES
DOI	10.1088/0022-3727/39/13/031
英文摘要	Single orientation epitaxial erbium silicide (ErSi2) nanowires (NWs) were fabricated by laser ablation and a post-annealing process on the Si (110) surface. The average width of the NWs is 10 nm and the maximum length is more than 10 mu m. The resistivity of the NWs was measured at room temperature using two methods: AFM probe measurement and direct electrodes deposited by FIB. It was demonstrated that the resistivities of the NWs were ten times that of the ErSi2 film material. The experimental data were compared with theoretical predictions for the strong size effect to the erbium silicide NW resistivity.; Physics, Applied; SCI(E); EI; 8; ARTICLE; 13; 2839-2842; 39
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/398527]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, ZG,Long, SB,Wang, CS,et al. Resistivity measurements of self-assembled epitaxially grown erbium silicide nanowires[J]. journal of physics d applied physics,2006.
APA	Li, ZG.,Long, SB.,Wang, CS.,Ming, L.,Wu, WG.,...&Zhao, XW.(2006).Resistivity measurements of self-assembled epitaxially grown erbium silicide nanowires.journal of physics d applied physics.
MLA	Li, ZG,et al."Resistivity measurements of self-assembled epitaxially grown erbium silicide nanowires".journal of physics d applied physics (2006).