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Characterization and attenuation mechanism of CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate
Leung, Lydia L. W. ; Hon, Wai-Cheong ; Zhang, Jinwen ; Chen, Kevin J.
2006
关键词current crowding edge-suspended coplanar waveguide (CPW) inductively coupled plasma deep reactive ion etching (ICP-DRIE) micromachining proximity effect tetramethyl ammonium hydroxide (TMAH) anisotropic silicon etching LINES INTERCONNECTS COMPONENTS INDUCTORS
DOI10.1109/TADVP.2006.879497
英文摘要This paper presents detailed characterization of a category of edge-suspended coplanar waveguides that were fabricated on low-resistivity silicon substrates using improved CMOS-compatible micromachining techniques. The edge-suspended structure is proposed to provide reduced substrate loss and strong mechanical support at the same time. It is revealed that, at radio or microwave frequencies, the electromagnetic waves are highly concentrated along the edges of the signal line. Removing the silicon underneath the edges of the signal line, along with the silicon between the signal and ground lines, can effectively reduce the substrate coupling and loss. The edge-suspended structure has been implemented by a combination of deep reactive ion etching and anisotropic wet etching. Compared to the conventional silicon-based coplanar waveguides, which show an insertion loss of 2.5dB/mm, the loss of edge- suspended coplanar waveguides with the same dimensions is reduced to as low as 0.5 dB/mm, and a much reduced attenuation per wavelength (dB/lambda(g)) at 39 GHz. Most importantly, the edge-suspended coplanar waveguides feature strong mechanical support provided by the silicon remaining underneath the center of the signal line. The performance of the coplanar waveguides is evaluated by high-frequency measurement and full-wave electromagnetic (EM) simulation. In addition, the resistance, inductance, conductance, capacitance (RLGC) line parameters and the propagation constant of the coplanar waveguides (CPWs) were extracted and analyzed.; Engineering, Manufacturing; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; SCI(E); EI; 5; ARTICLE; 3; 496-503; 29
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/398438]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Leung, Lydia L. W.,Hon, Wai-Cheong,Zhang, Jinwen,et al. Characterization and attenuation mechanism of CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate[J],2006.
APA Leung, Lydia L. W.,Hon, Wai-Cheong,Zhang, Jinwen,&Chen, Kevin J..(2006).Characterization and attenuation mechanism of CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate..
MLA Leung, Lydia L. W.,et al."Characterization and attenuation mechanism of CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate".(2006).
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