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Schottky barrier MOSFET structure with silicide source/drain on buried metal
Li Ding-Yu ; Sun Lei ; Zhang Sheng-Dong ; Wang Yi ; Liu Xiao-Yan ; Han Ru-Qi
刊名中国物理英文版
2007
关键词Schottky barrier MOSFET Schottky barrier barrier height silicide source/drain FIELD-EFFECT TRANSISTORS GERMANIDE GATE FABRICATION THICKNESS CONTACTS IMPACT SOI S/D
DOI10.1088/1009-1963/16/1/041
英文摘要In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal (SSDOM). The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel case. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V (for ErSi) and the bottom barrier is 0.6 eV (for CoSi2). Compared with the corresponding conventional Schottky barrier MOSFET structures (CSB), the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability (1.2 mA/mu m at V-ds = 1 V, V-gs = 2 V) and the high I-on/I-min ratio (10(6)) are both achieved by applying the SSDOM structure.; Physics, Multidisciplinary; SCI(E); EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 4; ARTICLE; 1; 240-244; 16
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/398009]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Li Ding-Yu,Sun Lei,Zhang Sheng-Dong,et al. Schottky barrier MOSFET structure with silicide source/drain on buried metal[J]. 中国物理英文版,2007.
APA Li Ding-Yu,Sun Lei,Zhang Sheng-Dong,Wang Yi,Liu Xiao-Yan,&Han Ru-Qi.(2007).Schottky barrier MOSFET structure with silicide source/drain on buried metal.中国物理英文版.
MLA Li Ding-Yu,et al."Schottky barrier MOSFET structure with silicide source/drain on buried metal".中国物理英文版 (2007).
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