Charge state readout and hyperfine interaction in a few-electron InGaAs   double quantum dot

doi:10.1103/PhysRevB.83.235302

CORC > 北京大学 > 信息科学技术学院

	Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot
	Larsson, M. ; Xu, H. Q.
刊名	physical review b
	2011
关键词	SPINS
DOI	10.1103/PhysRevB.83.235302
英文摘要	A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized in an InGaAs/InP heterostructure. The charge states of the double quantum dot are measured with the use of the charge readout sensor in the few-electron regime in which the current is too weak to be observable by direct measurements of electron transport through the double dot. We also measure the leakage current of the double quantum dot in the Pauli spin-blockade few-electron regime and study the singlet-triplet state mixing by the hyperfine coupling to the nuclear spins. The measurements of the leakage current in the weak external-magnetic-field region and for weak interdot couplings allow us to extract an effective nuclear magnetic field in the double-dot system. We also study spin relaxation and transport processes in the Pauli spin-blockade region at large external magnetic fields and observe transport through the excited triplet state in the few-electron double quantum dot.; Physics, Condensed Matter; SCI(E); 2; ARTICLE; 23; 83
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/394622]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Larsson, M.,Xu, H. Q.. Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot[J]. physical review b,2011.
APA	Larsson, M.,&Xu, H. Q..(2011).Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot.physical review b.
MLA	Larsson, M.,et al."Charge state readout and hyperfine interaction in a few-electron InGaAs double quantum dot".physical review b (2011).