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	Derivative superposition method for DG MOSFET application to RF mixer
	Huang, Shuai ; Lin, Xinnan ; Wei, Yiqun ; He, Jin
	2010
英文摘要	A high linear double-gate (DG) MOSFET application to RF mixer is proposed based on derivative superposition method which was successfully used in Bulk CMOS region. By independently biasing front and back gate voltage of DG MOSFET, one DG MOSFET device is reviewed as two parallel devices. In this way, we realize the derivative superposition method application in the DG MOSFET linearity analysis and high performance RF mixer. Via two- dimensional (2D) TCAD device simulation and through the third-order transconductance ( gm3 ) cancellation, we get some interesting results of DG MOSFET mixer different from the Bulk CMOS mixer. It is found that the DG MOSFET is suitable to work as a single device mixer because of coupling effect of two gates, e.g., a high linear independent DG MOSFET mixer shows 7.8dB improvement on IIP3 corresponding to the symmetrical DG mixer with the same DC current. The relationships between the amplitude of LO signal, the conversion gain and linearity are also analyzed in this paper. ? 2010 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ASQED.2010.5548308
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329894]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Shuai,Lin, Xinnan,Wei, Yiqun,et al. Derivative superposition method for DG MOSFET application to RF mixer. 2010-01-01.

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