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	Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode
	Zhu, Jingxuan ; Yan, Zhifeng ; Wang, Yinglei ; Lin, Xinnan ; He, Jin ; Wu, Wen ; Liu, Zhiwei ; Wang, Wenping ; Ma, Yong ; Cao, Juncheng
	2010
英文摘要	Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection characteristics under the case of optical beating. Furthermore, extensive characteristics of resonant detection under the optical beating mode have been predicted. ?2010 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2010.5667693
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329774]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhu, Jingxuan,Yan, Zhifeng,Wang, Yinglei,et al. Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode. 2010-01-01.

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