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	Simulation of implantation into HfO2 by MD method
	Ji, Huihui ; Min, Yu ; Shi, Hao ; Shi, Xiaokang ; Huang, Ru ; Zhang, Xing ; Suzuki, Kunihiro ; Oka, Hideki
	2004
英文摘要	Molecular dynamics (MD) method has not been reported to predict range profiles of implantation into HfO2 and stopping power models especially electronic stopping power model has not been studied specifically. In this article, MD method is successfully applied to simulate B, As and P implantation into HfO2. An efficient electronic stopping model with only one free parameter, i.e., the single electron radius, is carefully discussed. A reliable fitting value of the single electron radius is firstly given for B, As and P implantation into HfO2. Using the obtained fitting value, simulation results agree with SIMS data excellently over the energy range of 5 - 40keV.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329269]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ji, Huihui,Min, Yu,Shi, Hao,et al. Simulation of implantation into HfO2 by MD method. 2004-01-01.

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