Characteristics of 25nm MOSFETs with mechanical strain in the channel | |
Wu, Tao ; Liu, Xiaoyan ; Du, Gang ; Kang, Jingfeng ; Han, Ruqi | |
2004 | |
英文摘要 | The characteristics of typical 25nm p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as drive current and sub-threshold characteristics are investigated. ?2004 IEEE.; EI; 0 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/329228] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Wu, Tao,Liu, Xiaoyan,Du, Gang,et al. Characteristics of 25nm MOSFETs with mechanical strain in the channel. 2004-01-01. |
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