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	Characteristics of 25nm MOSFETs with mechanical strain in the channel
	Wu, Tao ; Liu, Xiaoyan ; Du, Gang ; Kang, Jingfeng ; Han, Ruqi
	2004
英文摘要	The characteristics of typical 25nm p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as drive current and sub-threshold characteristics are investigated. ?2004 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329228]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Tao,Liu, Xiaoyan,Du, Gang,et al. Characteristics of 25nm MOSFETs with mechanical strain in the channel. 2004-01-01.

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