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	Strain-induced very low noise RF MOSFETs on flexible plastic substrate
	Kao, H.L. ; Chin, Albert ; Hung, B.F. ; Lai, J.M. ; Lee, C.F. ; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L. ; Liu, X.Y. ; Kang, J.F.
	2005
英文摘要	Using microstrip line design to screen substrate resistance generated RF noise, very low 1. l dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 ??m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30??m that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 ??m and 90nm nodes MOSFETs.; EI; 0
语种	英语
DOI标识	10.1109/.2005.1469251
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/328895]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kao, H.L.,Chin, Albert,Hung, B.F.,et al. Strain-induced very low noise RF MOSFETs on flexible plastic substrate. 2005-01-01.

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