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	High performance Ti-Doped ZnO TFTs with AZO/TZO heterojunction S/D contacts
	Zhao, Nannan ; Han, Dedong ; Chen, Zhuofa ; Wu, Jing ; Cong, Yingying ; Dong, Junchen ; Zhao, Feilong ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi
	2015
DOI	10.1109/JDT.2015.2405542
英文摘要	In this paper, we successfully fabricated Ti-doped ZnO (TZO) thin film transistors (TFTs). Al-doped ZnO (AZO) film was adopted as source/drain (S/D) electrode, forming an AZO/TZO hetero-junction S/D contact. Meanwhile, TZO TFTs with ITO S/D electrode were also fabricated for comparison. Both AZO and ITO films were fabricated using radio frequency (RF) magnetron sputtering at room temperature (RT). Compared with ITO, device with AZO S/D electrodes exhibits higher Ion/Ioff ratio of 1.9 ?? 109, lower Ioff of 570 fA, and comparable saturation mobility (??sat) of 108.6 cm2 ?? V-1 ?? S-1. What's more, as channel length decreases, TFTs with AZO S/D electrodes still show good performances. ? 2005-2012 IEEE.; SCI(E); EI; 0; ARTICLE; zhaoyangnan@qq.com; handedong@pku.edu.cn; 595383099@qq.com; Wujing1248@yeah.net; linnexuan@pku.edu.cn; junchendong@126.com; fei-longzhao@126.com; zhangsd@pku.edu.cn; Zhangx@imepku.edu.cn; wangyi@ime.pku.edu.cn; 5; 412-416; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/328277]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Nannan,Han, Dedong,Chen, Zhuofa,et al. High performance Ti-Doped ZnO TFTs with AZO/TZO heterojunction S/D contacts[J],2015.
APA	Zhao, Nannan.,Han, Dedong.,Chen, Zhuofa.,Wu, Jing.,Cong, Yingying.,...&Wang, Yi.(2015).High performance Ti-Doped ZnO TFTs with AZO/TZO heterojunction S/D contacts..
MLA	Zhao, Nannan,et al."High performance Ti-Doped ZnO TFTs with AZO/TZO heterojunction S/D contacts".(2015).

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