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	ZnO nanowire-based Schottky-barrier-type UV light-emitting diodes
	Qifeng, Zhang ; Yanxin, Wang ; Hui, Sun ; Jinlei, Wu
	2006
英文摘要	Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm. ? 2006 Optical Society of America.; EI; 0
语种	英语
DOI标识	10.1109/CLEO.2006.4627935
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/328153]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qifeng, Zhang,Yanxin, Wang,Hui, Sun,et al. ZnO nanowire-based Schottky-barrier-type UV light-emitting diodes. 2006-01-01.

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