QQ客服 官方微博 反馈留言

	Au-Si eutectic wafer bonding mechanism analysis and a intensity model
	Wang, X. ; Zhang, D. ; Li, J. ; You, Z. ; Cai, B.
	2007
英文摘要	Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/327855]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, X.,Zhang, D.,Li, J.,et al. Au-Si eutectic wafer bonding mechanism analysis and a intensity model. 2007-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。