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Study on response time of photoemission of Cs2O thin film embedded with Ag ultrafine particles
Wu, Jinlei ; Guo, Lingjian ; Wu, Quande
刊名pan tao ti hsueh paochinese journal of semiconductors
1995
英文摘要The development of ultrashort duration laser pulses detection makes requests for characteristics of the response time in photoemissive materials. The response time of photoemission in ultrafine particle thin film is studied, and the transit time spread (TTS) and response time of peak value (tM) are discussed. The photoelectron response time will increase with increasing energy of photons. If the surface potential barrier of the thin film declines, the photoemissive sensitivity or quantum yield will rise. However the response time will also increase that means the response-time characteristic gets worse. As an example, the response time for Ag-O-Cs thin film is calculated for different cases when photoelectrons excited in Ag ultrafine particle travel through Cs2O semiconductor layer to the surface and escape into vacuum. The calculated response time is about 50fs when the thin film is irradiated by infrared rays with wavelength of 1.06??m.; EI; 0; 11; 842-848; 16
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/302909]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Wu, Jinlei,Guo, Lingjian,Wu, Quande. Study on response time of photoemission of Cs2O thin film embedded with Ag ultrafine particles[J]. pan tao ti hsueh paochinese journal of semiconductors,1995.
APA Wu, Jinlei,Guo, Lingjian,&Wu, Quande.(1995).Study on response time of photoemission of Cs2O thin film embedded with Ag ultrafine particles.pan tao ti hsueh paochinese journal of semiconductors.
MLA Wu, Jinlei,et al."Study on response time of photoemission of Cs2O thin film embedded with Ag ultrafine particles".pan tao ti hsueh paochinese journal of semiconductors (1995).
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