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	A comprehensive speed-power analysis of resistive switching memory arrays with selection devices
	Li, Haitong ; Huang, Peng ; Chen, Zhe ; Chen, Bing ; Gao, Bin ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng
	2014
英文摘要	In this work, a comprehensive analysis is performed to study the speed-power performance of one selector-one resistor (1S-1R) and one transistor-one resistor (1T-1R) resistive random access memory (RRAM) arrays, using a physics-based SPICE model of RRAM. It is found that for 1S-1R applications, high turn-on voltage and low conductivity of selectors are beneficial for power reduction, while low turn-on voltage and high conductivity are required for high-speed applications. High nonlinearity of selectors is critical for both low-power and high-speed 1S-1R applications. For 1T-1R arrays, interconnect RC components will impact energy consumption and RC delay, which may set a major limitation to high-speed low-power RRAM applications. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021237
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295567]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Haitong,Huang, Peng,Chen, Zhe,et al. A comprehensive speed-power analysis of resistive switching memory arrays with selection devices. 2014-01-01.

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