A comprehensive speed-power analysis of resistive switching memory arrays with selection devices | |
Li, Haitong ; Huang, Peng ; Chen, Zhe ; Chen, Bing ; Gao, Bin ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng | |
2014 | |
英文摘要 | In this work, a comprehensive analysis is performed to study the speed-power performance of one selector-one resistor (1S-1R) and one transistor-one resistor (1T-1R) resistive random access memory (RRAM) arrays, using a physics-based SPICE model of RRAM. It is found that for 1S-1R applications, high turn-on voltage and low conductivity of selectors are beneficial for power reduction, while low turn-on voltage and high conductivity are required for high-speed applications. High nonlinearity of selectors is critical for both low-power and high-speed 1S-1R applications. For 1T-1R arrays, interconnect RC components will impact energy consumption and RC delay, which may set a major limitation to high-speed low-power RRAM applications. ? 2014 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.2014.7021237 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/295567] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Li, Haitong,Huang, Peng,Chen, Zhe,et al. A comprehensive speed-power analysis of resistive switching memory arrays with selection devices. 2014-01-01. |
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