A compact model of resistive switching devices | |
Chen, B. ; Jun, Q.Y. ; Gao, B. ; Zhang, F.F. ; Wei, K.L. ; Chen, Y.S. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Han, R.Q. | |
2010 | |
英文摘要 | In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM. ?2010 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.2010.5667696 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/295456] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Chen, B.,Jun, Q.Y.,Gao, B.,et al. A compact model of resistive switching devices. 2010-01-01. |
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