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	A compact model of resistive switching devices
	Chen, B. ; Jun, Q.Y. ; Gao, B. ; Zhang, F.F. ; Wei, K.L. ; Chen, Y.S. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Han, R.Q.
	2010
英文摘要	In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM. ?2010 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2010.5667696
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295456]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, B.,Jun, Q.Y.,Gao, B.,et al. A compact model of resistive switching devices. 2010-01-01.

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