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	Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with effective potential quantum correction
	Du, Gang ; Zhang, Wei ; Wang, Juncheng ; Lu, Tiao ; Zhang, Pingwen ; Liu, Xiaoyan
	2010
英文摘要	As MOSFETs scaling down to nano-scale, short channel effect(SCE) become a critical issue. Multiple channel MOSFET structure such as FINFET [1,2] has well gate controllability on channel charge, and will be used in nano-scale CMOS technology. In this work the performance of 20nm bulk FINFET is investigated by Using 3D full band Monte Carlo Method with Effective Potential Quantum Correction. Gate and drain bias affect on the carrier density, velocity and energy distribution are introduced. The transit time and SSEC Cgs and Cgd as a function of Vds are showed. Results show about 0.1 psec intrinsic transit time at on state in this 20nm gate length device. ?2010 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2010.5667816
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295455]
专题	信息科学技术学院 工学院
推荐引用方式 GB/T 7714	Du, Gang,Zhang, Wei,Wang, Juncheng,et al. Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with effective potential quantum correction. 2010-01-01.

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