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	Oxide-based RRAM: Physical based retention projection
	Gao, B. ; Kang, J.F. ; Zhang, H.W. ; Sun, B. ; Chen, B. ; Liu, L.F. ; Liu, X.Y. ; Han, R.Q. ; Wang, Y.Y. ; Yu, B. ; Fang, Z. ; Yu, H.Y. ; Kwong, D.-L.
	2010
英文摘要	Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices. ?2010 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ESSDERC.2010.5618200
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295405]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gao, B.,Kang, J.F.,Zhang, H.W.,et al. Oxide-based RRAM: Physical based retention projection. 2010-01-01.

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