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	Atomic simulation of ion implantation into HfO2: LEACS vs. TSUPREM4
	Shi, Hao ; Shi, Xiaokang ; Yu, Min ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Suzuki, Kunihiro ; Oka, Hideki
	2004
英文摘要	Traditional Monte Carlo ion implantation simulator TSUPREM4 is used to investigate ion implantation into HfO2, but cannot get satisfactory results. In this paper, an atomic simulator named LEACS [1] is developed using molecular dynamics method [2,3]. By virtue of considering the basic physical interactions more precisely and with only one fitting parameter r s0 named one electron radius [4] used in the atomic simulator, it is found that LEACS rather than TSUPREM4 has a better precision in simulating ion implantations into HfO2. B, As and P implantations into HfO2 material in the energy range of 3keV to 40keV are simulated using LEACS. Very high accuracy is achieved in our simulation, which proves that molecular dynamics method is successfully implemented in our atomic simulator and the molecular dynamics method shows greater advantage than Monte Carlo method in TSUPREM4.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295362]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, Hao,Shi, Xiaokang,Yu, Min,et al. Atomic simulation of ion implantation into HfO2: LEACS vs. TSUPREM4. 2004-01-01.

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