QQ客服 官方微博 反馈留言

	Fabrication of the Sub-100nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology
	Sun, L. ; Liu, X.Y. ; Du, G. ; Kang, J.F. ; Guan, X.D. ; Han, R.Q.
	2004
英文摘要	The Schottky barrier MOSFETs with channel length of 70nm have been fabricated with sidewall etchback technology. The conventional lithography is applied for the definition of the sub-100nm channel region. In the process, the advanced lithography technology has not been involved. The SOI structure has been used to take place of the bulk silicon substrate, and the silicon on the source and drain has been transformed to silicide. The thermal emission leakage current is reduced due to the decrease of the area of the source/drain Schottky contact.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295361]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Sun, L.,Liu, X.Y.,Du, G.,et al. Fabrication of the Sub-100nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology. 2004-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。