Fabrication of the Sub-100nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology | |
Sun, L. ; Liu, X.Y. ; Du, G. ; Kang, J.F. ; Guan, X.D. ; Han, R.Q. | |
2004 | |
英文摘要 | The Schottky barrier MOSFETs with channel length of 70nm have been fabricated with sidewall etchback technology. The conventional lithography is applied for the definition of the sub-100nm channel region. In the process, the advanced lithography technology has not been involved. The SOI structure has been used to take place of the bulk silicon substrate, and the silicon on the source and drain has been transformed to silicide. The thermal emission leakage current is reduced due to the decrease of the area of the source/drain Schottky contact.; EI; 0 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/295361] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Sun, L.,Liu, X.Y.,Du, G.,et al. Fabrication of the Sub-100nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology. 2004-01-01. |
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