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	Fabrication and test of PECVD SiC resonator
	Wang, Yu ; Guo, Hui ; Zhang, Haixia ; Zhang, Guobing ; Li, Zhihong
	2007
英文摘要	This paper utilized SiC thin film deposited by low temperature PECVD to fabricate resonator at 300??C, following by annealing and doping to release its stress and improve its electronics contact. The test results show that, the frequency of PECVD SiC resonator is among 60-150KHz. The Q value of resonator was estimated according to the tested frequencyamplitude curve, is about 10??3. The ability of SiC resonators in erosion environment was also studied, under 5mins etching in KOH solution, the whole structure are kept very well. Therefore, this kind PECVD SiC resonator not only can be used widely in harsh environment, such as, high temperature, erosion and high pressure, but also can integrated with CMOS process, release the integration manufacturing of circuit and devices in micro-scale. Copyright ? 2007 by ASME.; EI; 0
语种	英语
DOI标识	10.1115/MNC2007-21240
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295128]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Yu,Guo, Hui,Zhang, Haixia,et al. Fabrication and test of PECVD SiC resonator. 2007-01-01.

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