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	A low temperature, non-aggressive wafer level hermetic package with UV cured SU8 bond
	Wu, Yexian ; Tang, Guanrong ; Chen, Jing
	2007
英文摘要	In this paper, we present a new technique that could realize wafer level 3-D hermetic package in a very low bonding temperature(120??C) for MEMS (Micro-electro -mechanical Systems) devices. Microcavities were etched on a host glass wafer and were bonded with a carrier silicon wafer. MicroChem SU-8 photoresist is used as the intermediate adhesive layer between the host and carrier wafer. The devices were fabricated by self-aligning etching technique and were finally sealed by coating the structures with sputtered aluminum. Helium leak testing is carried out to verify the hermetic characteristics of the package, 99.7% of the tested devices were qualified. This technology shows a significant improvement of the hermeticky properties of adhesive bonded cavities, making it particularly suitable for applications on gas-tightness with low temperature, non-aggressive demands. Copyright ? 2007 by ASME.; EI; 0
语种	英语
DOI标识	10.1115/MNC2007-21528
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295123]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Yexian,Tang, Guanrong,Chen, Jing. A low temperature, non-aggressive wafer level hermetic package with UV cured SU8 bond. 2007-01-01.

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