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	A molecular dynamic simulation on boron monomer and boron cluster implantation under line edge roughness
	Yuan, Li ; Ye, Yun ; Sui, Yi ; Yu, Min ; Huang, Ru ; Zhang, Xing ; Oka, Hideki
	2006
英文摘要	Gate line edge roughness (LER) can induce notable fluctuation of doping profile. In this paper, boron monomer and boron cluster implantation considering LER was investigated by molecular dynamic (MD) simulation. The lateral distribution of dopant at gate edge is simulated. To describe the smoothing ability of doping distribution, the largest roughness amplitude (LRA) is defined According to simulation results an experiential analytical model for doping profiles within area near rough line edge is concluded.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295053]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yuan, Li,Ye, Yun,Sui, Yi,et al. A molecular dynamic simulation on boron monomer and boron cluster implantation under line edge roughness. 2006-01-01.

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