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	Precise simulation on ultra-low energy ion implantation by Molecular Dynamic approach with proper interaction model
	Sui, Yi ; Yuan, Li ; Ye, Yun ; Yu, Min ; Huang, Ru ; Zhang, Xing ; Oka, Hideki
	2006
英文摘要	Molecular Dynamic (MD) approach has been recognized as precise simulation method for low energy ion implantation. Impact of interact potentials applied in MD method on precise simulation is investigated in this paper. Born-Mayer potential is applied to ion implantation simulation here. The comparison between Born-Mayer and ZBL potential is performed. B, P, As, implantation at around IKev are simulated and compared with Second Ion Mass Spectrum (SIMS) data. Simulations results show that with Born Mayer potential more accurate simulation results can be achieved for ultra-low energy implantation.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295050]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Sui, Yi,Yuan, Li,Ye, Yun,et al. Precise simulation on ultra-low energy ion implantation by Molecular Dynamic approach with proper interaction model. 2006-01-01.

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