Physical model for surface annihilation of silicon interstitials during annealing | |
Zhang, Xiao ; Yu, Min ; Zhan, Kai ; Ren, Liming ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan | |
2006 | |
英文摘要 | Surface annihilation is the main mechanism through which implantation defects are annealed out from Si wafer. Surface annihilation possibility of silicon interstitials has obvious impact on total diffusion of dopant as well as junction depth. In this paper, a model on variation of surface annihilation possibility for silicon interstitials is proposed. By considering the surface annihilation rate and desorption rate and surface defect point, the analytical model for effective surface annihilation possibility is developed and verified. The impact of surface annihilation possibility on enhanced diffusion is simulated. ? 2006 IEEE.; EI; 0 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/294996] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zhang, Xiao,Yu, Min,Zhan, Kai,et al. Physical model for surface annihilation of silicon interstitials during annealing. 2006-01-01. |
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