QQ客服 官方微博 反馈留言

	Physical model for surface annihilation of silicon interstitials during annealing
	Zhang, Xiao ; Yu, Min ; Zhan, Kai ; Ren, Liming ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan
	2006
英文摘要	Surface annihilation is the main mechanism through which implantation defects are annealed out from Si wafer. Surface annihilation possibility of silicon interstitials has obvious impact on total diffusion of dopant as well as junction depth. In this paper, a model on variation of surface annihilation possibility for silicon interstitials is proposed. By considering the surface annihilation rate and desorption rate and surface defect point, the analytical model for effective surface annihilation possibility is developed and verified. The impact of surface annihilation possibility on enhanced diffusion is simulated. ? 2006 IEEE.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294996]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Xiao,Yu, Min,Zhan, Kai,et al. Physical model for surface annihilation of silicon interstitials during annealing. 2006-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。