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	A continuous yet explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs
	Lining, Zhang ; Jin, He ; Jian, Zhang ; Jie, Feng
	2008
英文摘要	An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper. An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact solution of Poisson's equation of the surrounding-gate MOSFETs, instead of resorting to the Newton-Raphson numerical iterative. The analytic approximation not only gives accurate dependences of the carrier concentration on the geometry structures and bias, compared with the Newton-Raphson numerical method, but also is used to develop an explicit current-voltage model of the surrounding-gate MOSFETs combined with Pao-Pah current formulation. The presented explicit model is found to be computationally more efficient than the previous numerical Newton-Raphson iterative while more accurate than the previously published explicit model.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294955]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lining, Zhang,Jin, He,Jian, Zhang,et al. A continuous yet explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs. 2008-01-01.

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