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	Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture
	Kang, J.F. ; Gao, B. ; Chen, B. ; Huang, P. ; Zhang, F.F. ; Liu, X.Y. ; Chen, H.-Y. ; Jiang, Z. ; Wong, H.-S. Philip ; Yu, Shimeng
	2014
英文摘要	Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ISCAS.2014.6865154
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294882]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kang, J.F.,Gao, B.,Chen, B.,et al. Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture. 2014-01-01.

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