Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors | |
Han, Jing-Wen ; Sun, Lei ; Xu, Hao ; Zhang, Yi-Bo ; Zhang, Sheng-Dong ; Wang, Yi | |
2014 | |
英文摘要 | This paper presents a numerical simulation of the electrically separable dual-gate organic thin film transistors (DG-OTFTs). It is revealed that double-gate architecture is able to dynamically control the threshold voltage by the coupling of the top/bottom gates, and the threshold voltage was insensitive to the thickness of the active layer. The contact resistance of staggered OTFTs is decreased with thinner organic semiconductor layer thickness. We also observe that the device characteristics are sensitive to the misalignment, and the significant change of the driving ability and threshold voltage is also observed while misalignment exists. ? 2014 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.2014.7021535 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/294856] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Han, Jing-Wen,Sun, Lei,Xu, Hao,et al. Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors. 2014-01-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论