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	Design guidelines of In0.53Ga0.47As and Si tunneling field-effect transistors
	Wu, Jundong ; Huang, Qianqian ; Wu, Chunlei ; Huang, Ru
	2014
英文摘要	In this paper, the impacts of the source doping profile, effective oxide thickness (EOT), gate alignment, and trap density at the source junction on key characteristics of In0.53Ga0.47As- and Sibased tunneling field-effect transistors (TFETs) were comprehensively analyzed through Sentaurus simulations with calibrated models, which can provide some guidelines for device and process design. The simulations show that the EOT and the gate alignment should be carefully designed and controlled for both Si and In 0.53Ga0.47As TFETs fabrication. The EOT needs a tighter control in In0.53Ga0.47As TFETs, a suitable gate-source underlap can optimize the performance of device considering a non-ideal source doping profile. Moreover, the trap density at the source junction plays more significant impacts in In0.53Ga0.47As TFETs than Si TFETs. ? 2014 The Electrochemical Society.; EI; 0
语种	英语
DOI标识	10.1149/06001.0069ecst
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294842]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Jundong,Huang, Qianqian,Wu, Chunlei,et al. Design guidelines of In0.53Ga0.47As and Si tunneling field-effect transistors. 2014-01-01.

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