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	A-IGZO thin film transistors with channel layer deposited at room temperature and 250C
	Deng, Wei ; He, Xin ; Xiao, Xiang ; Wang, Ling ; Meng, Weizhi ; Zhang, Shengdong
	2014
英文摘要	The a-IGZO thin film transistors with channel layer deposited at room temperature and 250??C are fabricated in this work. Results show the TFTs with IGZO film deposited at 250??C have lower threshold voltage, higher carrier mobility, and better sub-threshold slope than that with IGZO film deposited at room temperature. X-ray photoelectron spectroscopy measurement shows the proportion of Indium atoms in the IGZO film deposited at 250??C is higher than at room temperature. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021453
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294838]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Deng, Wei,He, Xin,Xiao, Xiang,et al. A-IGZO thin film transistors with channel layer deposited at room temperature and 250C. 2014-01-01.

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