A TDC based process variation sensor for both NMOS and PMOS variation monitoration | |
Ai, Lei ; He, Yandong ; Zhang, Ganggang ; Zhang, Xing | |
2014 | |
英文摘要 | A TDC based process variation sensing circuit for monitoring the variation of both NMOS and PMOS is proposed. The digital outputs of this sensor can offer the circuit designer clear message that indicates the variation of both NMOS and PMOS. Based on the specific inverter chain design concept, this sensor demonstrated with better sensitivity. 10000 Monte Carlo Simulation based on 65nm bulk CMOS process technology is used to verify the feasibility of this sensor. ? 2014 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/EDSSC.2014.7061185 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/294793] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Ai, Lei,He, Yandong,Zhang, Ganggang,et al. A TDC based process variation sensor for both NMOS and PMOS variation monitoration. 2014-01-01. |
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