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	Inductively coupled plasma etching of bulk tungsten for MEMS applications
	Song, Lu ; Li, Nannan ; Zhang, Shibin ; Luo, Jin ; Hu, Jia ; Zhang, Yiming ; Chen, Shuhui ; Chen, Jing
	2014
英文摘要	Tungsten based MEMS devices have the potential to be used for many applications, such as tools for micro electrical discharge machining and ultrasonic machining, or mold for inject molding. For the first time, bulk tungsten inductively coupled plasma (ICP) etching was developed and characterized, which is capable of producing high aspect ratio (>13) structures with feature size below 3??m. Etching depth of 230??m has been achieved at an etch rate up to 2.2??m/min. This technology offers big opportunities for MEMS applications. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/MEMSYS.2014.6765687
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294761]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Song, Lu,Li, Nannan,Zhang, Shibin,et al. Inductively coupled plasma etching of bulk tungsten for MEMS applications. 2014-01-01.

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