Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio | |
Huang, Qianqian ; Ru, Huang ; Zhan, Zhan ; Wu, Chunlei ; Qiu, Yingxin ; Wang, Yangyuan | |
2012 | |
英文摘要 | In this paper, we have experimentally demonstrated an all-Si Pocket-Tunnel FET (Pocket-TFET) with steep subthreshold slope (SS) of 52mV/dec and high I ON/IOFF ratio of 3.9??106 based on the bulk silicon substrate by CMOS compatible process. It is the best experimental performance in the published silicon-based TFETs with a fully-depleted doping pocket layer at the source/channel interface. Compared with traditional TFET, through changing the drain layout, the extremely abrupt tunnel junction can be well achieved with the source pocket, resulting in the superior SS and I ON. In addition, the ambipolar effect can be also greatly reduced in the fabricated Pocket-TFET. ? 2012 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.2012.6467740 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/294586] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Huang, Qianqian,Ru, Huang,Zhan, Zhan,et al. Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio. 2012-01-01. |
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