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	Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio
	Huang, Qianqian ; Ru, Huang ; Zhan, Zhan ; Wu, Chunlei ; Qiu, Yingxin ; Wang, Yangyuan
	2012
英文摘要	In this paper, we have experimentally demonstrated an all-Si Pocket-Tunnel FET (Pocket-TFET) with steep subthreshold slope (SS) of 52mV/dec and high I ON/IOFF ratio of 3.9??106 based on the bulk silicon substrate by CMOS compatible process. It is the best experimental performance in the published silicon-based TFETs with a fully-depleted doping pocket layer at the source/channel interface. Compared with traditional TFET, through changing the drain layout, the extremely abrupt tunnel junction can be well achieved with the source pocket, resulting in the superior SS and I ON. In addition, the ambipolar effect can be also greatly reduced in the fabricated Pocket-TFET. ? 2012 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6467740
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294586]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Qianqian,Ru, Huang,Zhan, Zhan,et al. Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio. 2012-01-01.

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