A physical-based pMOSFETs threshold voltage model including the STI stress effect

doi:10.1088/1674-4926/32/5/054005

CORC > 北京大学 > 信息科学技术学院

	A physical-based pMOSFETs threshold voltage model including the STI stress effect
	Wu, Wei ; Du, Gang ; Liu, Xiaoyan ; Sun, Lei ; Kang, Jinfeng ; Han, Ruqi
刊名	journal of semiconductors
	2011
DOI	10.1088/1674-4926/32/5/054005
英文摘要	The physical threshold voltage model of pMOSFETs under shallow trench isolation (STI) stress has been developed. The model is verified by 130 nm technology layout dependent measurement data. The comparison between pMOSFET and nMOSFET model simulations due to STI stress was conducted to show that STI stress induced less threshold voltage shift and more mobility shift for the pMOSFET. The circuit simulations of a nine stage ring oscillator with and without STI stress proved about 11% improvement of average delay time. This indicates the importance of STI stress consideration in circuit design. ? 2011 Chinese Institute of Electronics.; EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 0; 5; 32
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294578]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Wei,Du, Gang,Liu, Xiaoyan,et al. A physical-based pMOSFETs threshold voltage model including the STI stress effect[J]. journal of semiconductors,2011.
APA	Wu, Wei,Du, Gang,Liu, Xiaoyan,Sun, Lei,Kang, Jinfeng,&Han, Ruqi.(2011).A physical-based pMOSFETs threshold voltage model including the STI stress effect.journal of semiconductors.
MLA	Wu, Wei,et al."A physical-based pMOSFETs threshold voltage model including the STI stress effect".journal of semiconductors (2011).