Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

doi:10.1002/pssc.201100415

CORC > 北京大学 > 信息科学技术学院

	Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs
	Liu, Shenghou ; Cai, Yong ; Gong, Rumin ; Wang, Jinyan ; Zeng, Chunhong ; Shi, Wenhua ; Feng, Zhihong ; Wang, Jingjing ; Yin, Jiayun ; Wen, Cheng P. ; Qin, Hua ; Zhang, Baoshun
刊名	physica status solidi c current topics in solid state physics
	2012
DOI	10.1002/pssc.201100415
英文摘要	In this paper, we demonstrate a nano-channel array (NCA) structure to realize the control of threshold voltage (Vth) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano-channels parallelly connected together. Using this structure, the Vth of AlGaN/GaN HEMTs can be systematically shifted from -3.92 V for a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.15 V for an enhancement-mode (E-mode) AlGaN/GaN HEMT. Besides, an optimum maximum peak transconductance of 235 mS/mm was achieved at the nano-channel width of 224 nm, which is almost two times larger than that of C-HEMT. ? 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.; EI; 0; 3-4; 879-882; 9
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294521]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Shenghou,Cai, Yong,Gong, Rumin,et al. Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs[J]. physica status solidi c current topics in solid state physics,2012.
APA	Liu, Shenghou.,Cai, Yong.,Gong, Rumin.,Wang, Jinyan.,Zeng, Chunhong.,...&Zhang, Baoshun.(2012).Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs.physica status solidi c current topics in solid state physics.
MLA	Liu, Shenghou,et al."Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs".physica status solidi c current topics in solid state physics (2012).