A novel switched capacitor bandgap reference with a correlated double sampling structure

doi:10.1088/1674-4926/34/2/025009

CORC > 北京大学 > 信息科学技术学院

	A novel switched capacitor bandgap reference with a correlated double sampling structure
	Chen, Jianguang ; Hao, Yueguo ; Cheng, Yuhua
刊名	journal of semiconductors
	2013
DOI	10.1088/1674-4926/34/2/025009
英文摘要	A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 ??m CMOS process. Due to the smaller change of the op-amp's output voltage, this topology is very suitable for low power applications. In addition, errors caused by the finite op-amp gain, input offset voltage, and 1/f noise are eliminated with the correlated double sampling technique. Additionally, two-level process calibration techniques are designed to minimize the process spread. Finally, a method of getting a full period valid reference voltage output is discussed and experimental results are provided to verify the effectiveness of the proposed structure. ? 2013 Chinese Institute of Electronics.; EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 0; 2; 34
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294336]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Jianguang,Hao, Yueguo,Cheng, Yuhua. A novel switched capacitor bandgap reference with a correlated double sampling structure[J]. journal of semiconductors,2013.
APA	Chen, Jianguang,Hao, Yueguo,&Cheng, Yuhua.(2013).A novel switched capacitor bandgap reference with a correlated double sampling structure.journal of semiconductors.
MLA	Chen, Jianguang,et al."A novel switched capacitor bandgap reference with a correlated double sampling structure".journal of semiconductors (2013).