Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon

CORC > 北京大学 > 信息科学技术学院

	Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon
	Xu, Mingzhen ; Tan, Changhua
刊名	pan tao ti hsueh paochinese journal of semiconductors
	2007
英文摘要	n-SiOxNy is an n-type wide-gap (Eg=9 eV) semiconductor material with double donor doping which was formed by using voltage and/or temperature stressing on insulation SiOxNy thin film and the insulator becomes semi-conductor when donor-like defect density reaches to 1.26 ?? 1020 cm-3 and double donor-like energy levels coexist in n-SiOxNy. The current-voltage characteristics can be described satisfactorily in terms of Fowler-Nordheim (F-N) tunneling current mechanism over the voltage range of much greater than 1 V, and the barrier height decreases with increasing doping concentration.; EI; 0; SUPPL.; 369-371; 28
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294189]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Mingzhen,Tan, Changhua. Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon[J]. pan tao ti hsueh paochinese journal of semiconductors,2007.
APA	Xu, Mingzhen,&Tan, Changhua.(2007).Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon.pan tao ti hsueh paochinese journal of semiconductors.
MLA	Xu, Mingzhen,et al."Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon".pan tao ti hsueh paochinese journal of semiconductors (2007).