Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon | |
Xu, Mingzhen ; Tan, Changhua | |
刊名 | pan tao ti hsueh paochinese journal of semiconductors
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2007 | |
英文摘要 | n-SiOxNy is an n-type wide-gap (Eg=9 eV) semiconductor material with double donor doping which was formed by using voltage and/or temperature stressing on insulation SiOxNy thin film and the insulator becomes semi-conductor when donor-like defect density reaches to 1.26 ?? 1020 cm-3 and double donor-like energy levels coexist in n-SiOxNy. The current-voltage characteristics can be described satisfactorily in terms of Fowler-Nordheim (F-N) tunneling current mechanism over the voltage range of much greater than 1 V, and the barrier height decreases with increasing doping concentration.; EI; 0; SUPPL.; 369-371; 28 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/294189] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Xu, Mingzhen,Tan, Changhua. Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon[J]. pan tao ti hsueh paochinese journal of semiconductors,2007. |
APA | Xu, Mingzhen,&Tan, Changhua.(2007).Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon.pan tao ti hsueh paochinese journal of semiconductors. |
MLA | Xu, Mingzhen,et al."Current-voltage characteristics of n-SiOxNy/n-Si heterojunction diode grown on silicon".pan tao ti hsueh paochinese journal of semiconductors (2007). |
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