Fabrication of ZnO nanowire-based diodes and their light-emitting properties

CORC > 北京大学 > 信息科学技术学院

	Fabrication of ZnO nanowire-based diodes and their light-emitting properties
	Wang, Yan-Xin ; Zhang, Qi-Feng ; Sun, Hui ; Chang, Yan-Ling ; Wu, Jin-Lei
刊名	wuli xuebaoacta physica sinica
	2008
英文摘要	A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks: one is centered at a wavelength of the ultraviolet 392 nm, and the other at the visible 525 nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I-V curve and the energy band structure.; EI; 0; 2; 1141-1144; 57
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294130]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Yan-Xin,Zhang, Qi-Feng,Sun, Hui,et al. Fabrication of ZnO nanowire-based diodes and their light-emitting properties[J]. wuli xuebaoacta physica sinica,2008.
APA	Wang, Yan-Xin,Zhang, Qi-Feng,Sun, Hui,Chang, Yan-Ling,&Wu, Jin-Lei.(2008).Fabrication of ZnO nanowire-based diodes and their light-emitting properties.wuli xuebaoacta physica sinica.
MLA	Wang, Yan-Xin,et al."Fabrication of ZnO nanowire-based diodes and their light-emitting properties".wuli xuebaoacta physica sinica (2008).